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HIGH-SPEED 3.3V 8/4K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
Features:

IDT70V9359/49L

True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed clock to data access - Commercial: 6.5/7.5/9ns (max.) - Industrial: 7.5ns (max.) Low-power operation - IDT70V9359/49L Active: 450mW (typ.) Standby: 1.5mW (typ.) Flow-Through or Pipelined output mode on either port via the FT/PIPE pins Counter enable and reset features Dual chip enables allow for depth expansion without additional logic

Full synchronous operation on both ports - 3.5ns setup to clock and 0ns hold on all control, data, and address inputs - Data input, address, and control registers - Fast 6.5ns clock to data out in the Pipelined output mode - Self-timed write allows fast cycle time - 10ns cycle time, 100MHz operation in Pipelined output mode Separate upper-byte and lower-byte controls for multiplexed bus and bus matching compatibility LVTTL- compatible, single 3.3V (0.3V) power supply Industrial temperature range (-40C to +85C) is available for 83 MHz Available in a 100-pin Thin Quad Flatpack (TQFP) and 100pin Fine Pitch Ball Grid Array (fpBGA) packages.
Functional Block Diagram
R/WL
UBL CE0L
R/WR
UBR CE0R
CE1L
LBL OEL
1 0 0/1
1 0 0/1
CE1R
LBR OER
FT/PIPEL
0/1
1b 0b
ba
1a 0a
0a 1a
a
b
0b 1b
0/1
FT/PIPER
I/O9L-I/O17L I/O0L-I/O8L
I/O Control
I/O9R-I/O17R I/O Control I/O0R-I/O8R
A12L(1) A0L CLKL Counter/ Address Reg. MEMORY ARRAY Counter/ Address Reg.
A12R(1) A0R CLKR
ADSL CNTENL CNTRSTL
ADSR CNTENR CNTRSTR
5638 drw 01
NOTE: 1. A12 is a NC for IDT70V9349.
AUGUST 2003
1
(c)2003 Integrated Device Technology, Inc. DSC-5638/3
IDT70V9359/49L High-Speed 3.3V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
The IDT70V9359/49 is a high-speed 8/4K x 18 bit synchronous Dual-Port RAM. The memory array utilizes Dual-Port memory cells to allow simultaneous access of any address from both ports. Registers on control, data, and address inputs provide minimal setup and hold times. The timing latitude provided by this approach allows systems to be designed with very short cycle times.
Description:
With an input data register, the IDT70V9359/49 has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. Fabricated using IDT's CMOS high-performance technology, these devices typically operate on only 450mW of power.
Pin Configurations(1,2,3,4)
07/03/02
Index
A9L A10L A11L A12L(1) NC NC NC LBL UBL CE0L CE1L CNTRSTL R/WL OEL VDD FT/PIPEL I/O17L I/O16L VSS I/O15L I/O14L I/O13L I/O12L I/O11L I/O10L
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76 75 2 74 3 73 1 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52
A8L A7L A6L A5L A4L A3L A2L A1L A0L CNTENL CLKL ADSL VSS Vss ADSR CLKR CNTENR A0R A1R A2R A3R A4R A5R A6R A7R
70V9359/49PF PN100-1(5) 100-Pin TQFP Top View(6)
51 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A8R A9R A10R A11R A12R(1) NC NC NC LBR UBR CE0R CE1R CNTRSTR R/WR VSS OER FT/PIPER I/O17R VSS I/O16R I/O15R I/O14R I/O13R I/O12R I/O11R .
I/O9L I/O8L VDD I/O7L I/O6L I/O5L I/O4L I/O3L I/O2L VSS I/O1L I/O0L VSS I/O0R I/O1R I/O2R I/O3R I/O4R I/O5R I/O6R VDD I/O7R I/O8R I/O9R I/O10R
NOTES: 1. A12 is a NC for IDT70V9349. 2. All VDD pins must be connected to power supply. 3. All VSS pins must be connected to ground supply. 4. Package body is approximately 14mm x 14mm x 1.4mm. 5. This package code is used to reference the package diagram. 6. This text does not indicate orientation of the actual part-marking.
5638 drw 02
6.42 2
IDT70V9359/49L High-Speed 3.3V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Pin Configurations(cont'd)(1,2,3,4)
70V9359/49BF BF100(5) 100-Pin fpBGA Top View(6)
A2 A3 A4
CNTRSTR
07/03/02
A1
A5
A6
A7
A8
A9
A10
A8R
B1
A11R
B2
UBR
B3
Vss
B5
Vss
B6 B7
Vss
I/O13R I/O10R I/O17R
B8 B9 B10
B4
A6R
C1
A7R
C2
A10R A12R(1) R/WR OER PL/FTR I/O12R I/O9R I/O6R
C3 C4 C5 C6 C7 C8 C9 C10
A3R
D1
A4R
D2
A5R
D3
A9R
D4
CE1R I/O16R I/O15R I/O11R I/O7R I/O3R
D5 D6 D7 D8 D9 D10
A0R
E1
CLKR
E2
A1R
E3 CNTENR F3
A2R
E4
LBR
E5
CE0R I/O14R I/O8R I/O5R I/O1R
E6 E7 E8 E9 E10
Vss
F1
ADSR
F2
A1L
F4
ADSL
F5
Vss
F6
I/O4R I/O2R I/O0R
F7 F8 F9
VDD
F10
Vss
G1 CNTENL H1
CLKL
G2
A0L
G3
A3L
G4
VDD
G5
Vss
G6
VDD
G7
I/O2L
G8
I/O1L
G9
I/O0L
G10
A4L
H2
A7L
H3
UBL
H4 H5
Vss
I/O13L
H6
NC
H7
I/O4L
H8
Vss
H9
I/O3L
H10
,
A2L
J1
A6L
J2
A11L
J3
CE0L
J4
CNTRSTL
I/O15L I/O9L I/O7L
J6 J7 J8
I/O6L
J9
I/O5L
J10
J5
A5L
K1
A9L
K2
A12L(1) R/WL
K3 K4
OEL PL/FTL I/O12L I/O10L
K5 K6 K7 K8
Vss
K9
I/O8L
K10
A8L
A10L
LBL
CE1L
VDD
VDD
I/O16L I/O14L I/O11L I/O17L
5638 drw 03
NOTES: 1. A12 is a NC for IDT70V9349. 2. All VDD pins must be connected to power supply. 3. All VSS pins must be connected to ground supply. 4. Package body is approximately 10mm x 10mm x 1.4mm with 0.8mm ball pitch. 5. This package code is used to reference the package diagram. 6. This text does not indicate orientation of the actual part-marking.
6.42 3
IDT70V9359/49L High-Speed 3.3V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Pin Names
Left Port CE0L, CE1L R/WL OEL A0L - A12L
(1)
Right Port CE0R, CE1R R/WR OER A0R - A12R
(1)
Names Chip Enables (3) Read/Write Enable Output Enable Address Data Input/Output Clock Upper Byte Select(2) Lower Byte Select(2) Address Strobe Enable Counter Enable Counter Reset Flow-Through / Pipeline Power (3.3V) Ground (0V)
5638 tbl 01
I/O0L - I/O17L CLKL UBL LBL ADSL CNTENL CNTRSTL FT/PIPEL
I/O0R - I/O17R CLKR UBR LBR ADSR CNTENR CNTRSTR FT/PIPER VDD VSS
NOTE: 1. A12 is a NC for IDT70V9349. 2. LB and UB are single buffered regardless of state of FT/PIPE. 3. CEo and CE1 are single buffered when FT/PIPE = VIL, CEo and CE1 are double buffered when FT/PIPE = VIH, i.e. the signals take two cycles to deselect.
Truth Table I--Read/Write and Enable Control(1,2,3)
OE X X X X X X L L L H CLK X CE0(5) H X L L L L L L L L CE1(5) X L H H H H H H H H UB(4) X X H L H L L H L X LB(4) X X H H L L H L L X R/W X X X L L L H H H X Upper Byte I/O9-17 High-Z High-Z High-Z DATAIN High-Z DATAIN DATAOUT High-Z DATAOUT High-Z Lower Byte I/O0-8 High-Z High-Z High-Z High-Z DATAIN DATAIN High-Z DATAOUT DATAOUT High-Z Deselected-Power Down Deselected-Power Down Both Bytes Deselected Write to Upper Byte Only Write to Lower Byte Only Write to Both Bytes Read Upper Byte Only Read Lower Byte Only Read Both Bytes Outputs Disabled
5638 tbl 02
MODE
NOTES: 1. "H" = VIH, "L" = VIL, "X" = Don't Care. 2. ADS, CNTEN, CNTRST = X. 3. OE is an asynchronous input signal. 4 LB and UB are single buffered regardless of state of FT/PIPE. 5. CEo and CE1 are single buffered when FT/PIPE = VIL. CEo and CE1 are double buffered when FT/PIPE = VIH, i.e. the signals take two cycles to deselect.
6.42 4
IDT70V9359/49L High-Speed 3.3V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Truth Table II--Address Counter Control(1,2)
External Address An X X X Previous Internal Address X An An + 1 X Internal Address Used An An + 1 An + 1 A0 CLK ADS L(4) H H X CNTEN X L
(5)
CNTRST H H H L
(4)
I/O(3) DI/O (n) DI/O(n+1) DI/O(n+1) DI/O(0) External Address Used
MODE
Counter Enabled--Internal Address generation External Address Blocked--Counter disabled (An + 1 reused) Counter Reset to Address 0
5638 tbl 03
H X
NOTES: 1. "H" = VIH, "L" = VIL, "X" = Don't Care. 2. CE0, LB, UB, and OE = VIL; CE1 and R/W = VIH. 3. Outputs configured in Flow-Through Output mode: if outputs are in Pipelined mode the data out will be delayed by one cycle. 4. ADS and CNTRST are independent of all other signals including CE0, CE1, UB and LB. 5. The address counter advances if CNTEN = VIL on the rising edge of CLK, regardless of all other signals including CE0, CE1, UB and LB.
Recommended Operating Temperature and Supply Voltage
Grade Commercial Industrial Ambient Temperature(1) 0OC to +70OC -40OC to +85OC GND 0V 0V VDD 3.3V + 0.3V 3.3V + 0.3V
5638 tbl 04
Recommended DC Operating Conditions
Symbol VDD VSS VIH VIL Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Min. 3.0 0 2.0 -0.3
(1)
Typ. 3.3 0
____ ____
Max. 3.6 0 VDD+0.3V 0.8
(2)
Unit V V V V
5638 tbl 05
NOTES: 1. This is the parameter TA. This is the "instant on" case temperature.
NOTES: 1. VIL > -1.5V for pulse width less than 10 ns. 2. VTERM must not exceed VDD+0.3V.
Absolute Maximum Ratings(1)
Symbol VTERM(2) Rating Terminal Voltage with Respect to GND Temperature Under Bias Storage Temperature DC Output Current Commercial & Industrial -0.5 to +4.6 Unit V
Capacitance(1)
Symbol CIN COUT
(3)
(TA = +25C, f = 1.0MHZ)
Parameter Input Capacitance Output Capacitance Conditions(2) VIN = 3dV VOUT = 3dV Max. 9 10 Unit pF pF
5638 tbl 07
TBIAS TSTG IOUT
-55 to +125 -65 to +150 50
o
C C
o
mA
5638 tbl 06
NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed VDD +0.3V for more than 25% of the cycle time or 10ns maximum, and is limited to < 20mA for the period of VTERM > VDD + 0.3V.
NOTES: 1. These parameters are determined by device characterization, but are not production tested. 2. 3dV references the interpolated capacitance when the input and output switch from 0V to 3V or from 3V to 0V. 3. COUT also references CI/O.
6.42 5
IDT70V9359/49L High-Speed 3.3V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range ( VDD= 3.3V 0.3V)
70V9359/49L Symbol |ILI| |ILO| VOL VOH Parameter Input Leakage Current(1) Output Leakage Current Output Low Voltage Output High Voltage VDD = 3.6V, VIN = 0V to VDD CE = VIH or CE1 = VIL, VOUT = 0V to VDD IOL = +4mA IOH = -4mA Test Conditions Min.
___ ___ ___
Max. 5 5 0.4
___
Unit A A V V
5638 tbl 08
2.4
NOTE: 1. At VDD < 2.0V input leakages are undefined.
DC Electrical Characteristics Over the Operating Temperature Supply Voltage Range(3) (VDD = 3.3V 0.3V)
70V9359/49L6 Com'l Only Symbol IDD Parameter Dynamic Operating Current (Both Ports Active) Standby Current (Both Ports - TTL Level Inputs) Standby Current (One Port - TTL Level Inputs) Full Standby Current (Both Ports - CMOS Level Inputs) Full Standby Current (One Port - CMOS Level Inputs) Test Condition CEL and CER= VIL, Outputs Disabled, f = fMAX(1) CEL = CER = VIH f = fMAX(1) CE"A" = VIL and CE"B" = VIH(5) Active Port Outputs Disabled, f=fMAX(1) Both Ports CEL and CER >VDD - 0.2V, VIN > VDD- 0.2V or VIN < 0.2V, f = 0(2) Version COM'L IND COM'L IND COM'L IND COM'L IND L L L L L L L L L L Typ.(4) 175
____
70V9359/49L7 Com'l & Ind Typ. (4) 155 155 40 40 105 105 0.5 0.5 95 95 Max. 280 330 70 80 170 180 3.0 3.0 160 175
70V9359/49L9 Com'l Only Typ. (4) 135
____
Max. 330
____
Max. 230
____
Unit mA
ISB1
50
____
80
____
30
____
60
____
mA
ISB2
115
____
185
____
95
____
155
____
mA
ISB3
0.5
____
3.0
____
0.5
____
3.0
____
mA
ISB4
COM'L CE"A" < 0.2V and CE"B" > VDD - 0.2V(5) IND VIN > VDD- 0.2V or VIN < 0.2V, Active Port, (1) Outputs Disabled , f = fMAX
105
____
175
____
85
____
145
____
mA
5638 tbl 09
NOTES: 1. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of 1/tCYC, using "AC TEST CONDITIONS" at input levels of GND to 3V. 2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby. 3. Port "A" may be either left or right port. Port "B" is the opposite from port "A". 4. VDD = 3.3V, TA = 25C for Typ, and are not production tested. ICC DC(f=0) = 90mA (Typ). 5. CEX = VIL means CE0X = VIL and CE1X = VIH CEX = VIH means CE0X = VIH or CE1X = VIL CEX < 0.2V means CE0X < 0.2V and CE1X > VDD - 0.2V CEX > VDD - 0.2V means CE0X > VDD - 0.2V or CE1X < 0.2V "X" represents "L" for left port or "R" for right port.
6.42 6
IDT70V9359/49L High-Speed 3.3V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
AC Test Conditions
Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels Output Load GND to 3.0V 2ns Max. 1.5V 1.5V Figures 1, 2, and 3
5638 tbl 10
3.3V
3.3V
590 DATAOUT 435 30pF DATAOUT 435
590
5pF*
5638 drw 04
5638 drw 05
Figure 1. AC Output Test load.
Figure 2. Output Test Load (For tCKLZ, tCKHZ, tOLZ, and tOHZ). *Including scope and jig.
8 7 6 5 tCD1, tCD2 (Typical, ns) 4 3 2 1 0 -1
- 10pF is the I/O capacitance of this device, and 30pF is the AC Test Load Capacitance
20 40 60 80 100 120 140 160 180 200 Capacitance (pF)
5638 drw 06
.
Figure 3. Typical Output Derating (Lumped Capacitive Load).
6.42 7
IDT70V9359/49L High-Speed 3.3V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the Operating Temperature Range (Read and Write Cycle Timing)(3) ( VDD= 3.3V 0.3V, TA = 0C to +70C)
70V9359/49L6 Com'l Only Symbol tCYC1 tCYC2 tCH1 tCL1 tCH2 tCL2 tR tF tSA tHA tSC tHC tSB tHB tSW tHW tSD tHD tSAD tHAD tSCN tHCN tSRST tHRST tOE tOLZ tOHZ tCD1 tCD2 tDC tCKHZ tCKLZ Clock Cycle Time (Flow-Through) Clock Cycle Time (Pipelined)(2) Clock High Time (Flow-Through) Clock Low Time (Flow-Through) Clock High Time (Pipelined)(2) Clock Low Time (Pipelined) Clock Rise Time Clock Fall Time Address Setup Time Address Hold Time Chip Enable Setup Time Chip Enable Hold Time Byte Enable Setup Time Byte Enable Hold Time R/W Setup Time R/W Hold Time Input Data Setup Time Input Data Hold Time ADS Setup Time ADS Hold Time CNTEN Setup Time CNTEN Hold Time CNTRST Setup Time CNTRST Hold Time Output Enable to Data Valid Output Enable to Output Low-Z
(1) (1) (2) (2) (2)
70V9359/49L7 Com'l & Ind Min. 22 12 7.5 7.5 5 5
____ ____
70V9359/49L9 Com'l Only Min. 25 15 12 12 6 6
____ ____
Parameter
Min. 19 10 6.5 6.5 4 4
____ ____
Max.
____ ____ ____ ____ ____ ____
Max.
____ ____ ____ ____ ____ ____
Max.
____ ____ ____ ____ ____ ____
Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
(2)
3 3
____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____
3 3
____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____
3 3
____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____ ____
3.5 0 3.5 0 3.5 0 3.5 0 3.5 0 3.5 0 3.5 0 3.5 0
____
4 0 4 0 4 0 4 0 4 0 4 0 4 0 4 0
____
4 1 4 1 4 1 4 1 4 1 4 1 4 1 4 1
____
6.5
____
7.5
____
9
____
2 1
____ ____
2 1
____ ____
2 1
____ ____
Output Enable to Output High-Z
7 15 6.5
____
7 18 7.5
____
7 20 9
____
Clock to Data Valid (Flow-Through)(2) Clock to Data Valid (Pipelined)
(2)
Data Output Hold After Clock High Clock High to Output High-Z
(1)
2 2 2
2 2 2
2 2 2
9
____
9
____
9
____
Clock High to Output Low-Z(1)
Port-to-Port Delay tCWDD tCCS Write Port Clock High to Read Data Delay Clock-to-Clock Setup Time
____ ____
24 9
____ ____
28 10
____ ____
35 15
ns ns
5638 tbl 11
NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2). This parameter is guaranteed by device characterization, but is not production tested. 2. The Pipelined output parameters (tCYC2, tCD2) apply to either or both the Left and Right ports when FT/PIPE = VIH. Flow-through parameters (tCYC1, tCD1) apply when FT/PIPE = VIL for that port. 3. All input signals are synchronous with respect to the clock except for the asynchronous Output Enable (OE), FT/PIPER, and FT/PIPEL.
6.42 8
IDT70V9359/49L High-Speed 3.3V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Timing Waveform of Read Cycle for Flow-Through Output (FT/PIPE"X" = VIL)(3,7)
tCYC1 tCH1 CLK
CE0
tCL1
tSC CE1 tSB
UB, LB
tHC
tSC
tHC
tHB tSB tHB
R/W
tSW tHW tSA tHA An + 1 tCD1 tDC Qn tCKLZ
(1)
ADDRESS
(5)
An
An + 2
An + 3 tCKHZ (1)
DATAOUT
Qn + 1
(1)
Qn + 2 tOLZ
(1)
tOHZ
tDC
OE
(2)
tOE
5638 drw 07
Timing Waveform of Read Cycle for Pipelined Operation (FT/PIPE"X" = VIH)(3,7)
tCYC2 tCH2 CLK CE0 tSC CE1 UB, LB tSB tHB tSB
(6)
tCL2
tHC
tSC
(4)
tHC
tHB
R/W
tSW tSA
tHW tHA An + 1 (1 Latency) tCD2 Qn tCKLZ
(1)
ADDRESS
(5)
An
An + 2 tDC Qn + 1
An + 3
DATAOUT
Qn + 2
(1)
(6)
tOHZ
tOLZ
(1)
OE
(2)
tOE
5638 drw 08 NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2). 2. OE is asynchronously controlled; all other inputs are synchronous to the rising clock edge. 3. ADS = VIL, CNTEN and CNTRST = VIH. 4. The output is disabled (High-Impedance state) by CE0 = VIH, CE1 = VIL following the next rising edge of the clock. Refer to Truth Table 1. 5. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 6. If UB or LB was HIGH, then the Upper Byte and/or Lower Byte of DATAOUT for Qn + 2 would be disabled (High-Impedance state). 7. "X' here denotes Left or Right port. The diagram is with respect to that port.
6.42 9
IDT70V9359/49L High-Speed 3.3V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Timing Waveform of a Bank Select Pipelined Read(1,2)
tCH2 CLK tSA ADDRESS(B1) tSC
CE0(B1)
tCYC2 tCL2
tHA A0 tHC tSC tCD2 tHC tCD2 Q0 tDC tCKHZ(3) Q1 tDC A3 A4 tCD2 Q3 tCKLZ
(3)
A1
A2
A3
A4
A5
A6
DATAOUT(B1) tSA ADDRESS(B2) tHA A0 A1
tCKHZ (3) A5 A6
A2
tSC tHC
CE0(B2)
tSC
tHC tCD2 tCKHZ Q2
(3)
tCD2 tCKLZ (3)
5638 drw 09
DATAOUT(B2) tCKLZ(3)
Q4
Timing Waveform with Port-to-Port Flow-Through Read(4,5,7)
CLK "A" tSW tHW R/W "A" tSA ADDRESS "A" tHA
NO MATCH
MATCH
tSD DATAIN "A"
VALID
tHD
tCCS CLK "B"
(6)
tCD1 R/W "B" tSW tSA ADDRESS "B" tHW tHA
NO MATCH
MATCH
tCWDD DATAOUT "B" tDC
(6)
tCD1
VALID VALID
tDC
5638 drw 10
NOTES: 1. B1 Represents Bank #1; B2 Represents Bank #2. Each Bank consists of one IDT70V9359/49 for this waveform, and are setup for depth expansion in this example. ADDRESS(B1) = ADDRESS(B2) in this situation. 2. UB, LB, OE, and ADS = VIL; CE1(B1), CE1(B2), R/W, CNTEN, and CNTRST = VIH. 3. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2). 4. CE0, UB, LB, and ADS = VIL; CE1, CNTEN, and CNTRST = VIH. 5. OE = VIL for the Right Port, which is being read from. OE = VIH for the Left Port, which is being written to. 6. If tCCS < maximum specified, then data from right port READ is not valid until the maximum specified for tCWDD. If tCCS > maximum specified, then data from right port READ is not valid until tCCS + tCD1. tCWDD does not apply in this case. 7. All timing is the same for both Left and Right ports. Port "A" may be either Left or Right port. Port "B" is the opposite from Port "A".
6.42 10
IDT70V9359/49L High-Speed 3.3V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Timing Waveform of Pipelined Read-to-Write-to-Read (OE = VIL)(3)
tCYC2 tCH2 tCL2 CLK
CE0
tSC CE1 tSB
UB, LB
tHC
tHB
tSW tHW R/W tSW tHW
ADDRESS
(4)
An tSA tHA
An +1
An + 2
An + 2 tSD tHD Dn + 2
An + 3
An + 4
DATAIN
(2)
tCD2 Qn READ
tCKHZ
(1)
tCKLZ
(1)
tCD2 Qn + 3
DATAOUT
NOP
(5)
WRITE
READ
5638 drw 11
Timing Waveform of Pipelined Read-to-Write-to-Read (OE Controlled)(3)
tCH2 CLK CE0 tSC tHC CE1 tSB UB, LB tSW tHW R/W tSW tHW tHB tCYC2 tCL2
ADDRESS
(4)
An tSA tHA
An +1
An + 2 tSD tHD
An + 3
An + 4
An + 5
DATAIN
(2)
tCD2 Qn tOHZ(1)
Dn + 2
Dn + 3
tCKLZ(1)
tCD2 Qn + 4
DATAOUT
OE READ WRITE READ
5638 drw 12
NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2). 2. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 3. CE0, UB, LB, and ADS = VIL; CE1, CNTEN, and CNTRST = VIH. "NOP" is "No Operation". 4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 5. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.
6.42 11
IDT70V9359/49L High-Speed 3.3V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Timing Waveform of Flow-Through Read-to-Write-to-Read (OE = VIL)(3)
tCH1 CLK tCYC1 tCL1
CE0
tSC CE1 tSB
UB, LB
tHC
tHB
tSW tHW R/W tSW tHW
ADDRESS
(4)
tSA DATAIN
(2)
An tHA
An +1
An + 2
An + 2 tSD tHD Dn + 2
An + 3
An + 4
tCD1 Qn tDC READ
tCD1 Qn + 1 tCKHZ (5) NOP
(1)
tCD1
tCD1 Qn + 3 tDC READ
DATAOUT
tCKLZ WRITE
(1)
5638 drw 13
Timing Waveform of Flow-Through Read-to-Write-to-Read (OE Controlled)(3)
tCYC1 tCH1 tCL1 CLK
CE0
tSC CE1 tSB
UB, LB
tHC
tHB
tSW tHW R/W ADDRESS
(4)
tSW tHW An tSA tHA An +1 An + 2 tSD tHD Dn + 2
(2)
An + 3
An + 4
An + 5
DATAIN tCD1 Qn tOHZ
OE
(1)
Dn + 3
tDC
tOE tCD1
(1)
tCD1 Qn + 4 tDC
DATAOUT
tCKLZ
READ
WRITE
READ
5638 drw 14
NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2). 2. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 3. CE0, UB, LB, and ADS = VIL; CE1, CNTEN, and CNTRST = VIH. "NOP" is "No Operation". 4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 5. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.
6.42 12
IDT70V9359/49L High-Speed 3.3V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Timing Waveform of Pipelined Read with Address Counter Advance(1)
tCH2 CLK tSA ADDRESS An tSAD tHAD
ADS
tCYC2 tCL2
tHA
tSAD tHAD
CNTEN
tSCN tHCN tCD2
DATAOUT
Qx - 1(2)
Qx tDC
Qn
Qn + 1
Qn + 2(2)
Qn + 3
READ EXTERNAL ADDRESS
READ WITH COUNTER
COUNTER HOLD
READ WITH COUNTER
5638 drw 15
Timing Waveform of Flow-Through Read with Address Counter Advance(1)
tCH1 CLK tSA ADDRESS tHA tCYC1 tCL1
An tSAD tHAD
ADS
tSAD tHAD tSCN tHCN
CNTEN
tCD1 DATAOUT Qx(2) tDC READ EXTERNAL ADDRESS READ WITH COUNTER COUNTER HOLD READ WITH COUNTER
5638 drw 16
Qn
Qn + 1
Qn + 2
Qn + 3(2)
Qn + 4
NOTES: 1. CE0, OE, UB, and LB = VIL; CE1, R/W, and CNTRST = VIH. 2. If there is no address change via ADS = VIL (loading a new address) or CNTEN = VIL (advancing the address), i.e. ADS = VIH and CNTEN = VIH, then the data output remains constant for subsequent clocks.
6.42 13
IDT70V9359/49L High-Speed 3.3V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Timing Waveform of Write with Address Counter Advance (Flow-Through or Pipelined Outputs)(1)
tCH2 CLK tSA ADDRESS tHA tCYC2 tCL2
An
INTERNAL(3) ADDRESS tSAD tHAD
ADS
An(7)
An + 1
An + 2
An + 3
An + 4
CNTEN(7)
tSD tHD DATAIN Dn WRITE EXTERNAL ADDRESS Dn + 1 Dn + 1 Dn + 2 Dn + 3 Dn + 4
WRITE WRITE WITH COUNTER COUNTER HOLD
WRITE WITH COUNTER
5638 drw 17
Timing Waveform of Counter Reset (Pipelined Outputs)(2)
tCH2 CLK tSA tHA ADDRESS(4) INTERNAL(3) ADDRESS R/W
ADS CNTEN
tCYC2 tCL2
An Ax (6) tSW tHW
An + 1
An + 2
0
1
An
An + 1
tSAD tHAD tSCN tHCN tSRST tHRST
CNTRST
tSD
tHD D0 Q0 Q1 READ ADDRESS n READ ADDRESS n+1 Qn
DATAIN DATAOUT(5) COUNTER RESET
(6)
WRITE ADDRESS 0
READ ADDRESS 0
READ ADDRESS 1
NOTES: 5638 drw 18 1. CE0, UB, LB, and R/W = VIL; CE1 and CNTRST = VIH. 2. CE0, UB, LB = VIL; CE1 = VIH. 3. The "Internal Address" is equal to the "External Address" when ADS = VIL and equals the counter output when ADS = VIH. 4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 5. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 6. No dead cycle exists during counter reset. A READ or WRITE cycle may be coincidental with the counter reset cycle. ADDR0 will be accessed. Extra cycles are shown here simply for clarification. 7. CNTEN = VIL advances Internal Address from `An' to `An +1'. The transition shown indicates the time required for the counter to advance. The `An +1' Address is written to during this cycle.
6.42 14
IDT70V9359/49L High-Speed 3.3V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Functional Description
The IDT70V9359/49 provides a true synchronous Dual-Port Static RAM interface. Registered inputs provide minimal set-up and hold times on address, data, and all critical control inputs. All internal registers are clocked on the rising edge of the clock signal, however, the self-timed internal write pulse is independent of the LOW to HIGH transition of the clock signal. An asynchronous output enable is provided to ease asynchronous bus interfacing. Counter enable inputs are also provided to stall the operation of the address counters for fast interleaved memory applications. CE0 = VIL and CE1 = VIH for one clock cycle will power down the internal circuitry to reduce static power consumption. Multiple chip enables allow easier banking of multiple IDT70V9359/49's for depth expansion configurations. When the Pipelined output mode is enabled, two cycles are required with CE0 = VIL and CE1 = VIH to re-activate the outputs.
Depth and Width Expansion
The IDT70V9359/49 features dual chip enables (refer to Truth Table I) in order to facilitate rapid and simple depth expansion with no requirements for external logic. Figure 4 illustrates how to control the varioius chip enables in order to expand two devices in depth. The IDT70V9359/49 can also be used in applications requiring expanded width, as indicated in Figure 4. Since the banks are allocated at the discretion of the user, the external controller can be set up to drive the input signals for the various devices as required to allow for 36-bit or wider applications.
A13/A12(1)
IDT70V9359/49
CE0 CE1 VDD
IDT70V9359/49
CE0 CE1 VDD
Control Inputs
Control Inputs
IDT70V9359/49
CE1 CE0
IDT70V9359/49
CE1 CE0 CNTRST CLK ADS CNTEN R/W LB, UB OE
Control Inputs
Control Inputs
5638 drw 19
Figure 4. Depth and Width Expansion with IDT70V9359/49
NOTE: 1. A13 is for IDT70V9359, A12 is for IDT70V9349.
6.42 15
IDT70V9359/49L High-Speed 3.3V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Ordering Information
IDT XXXXX Device Type A Power 99 Speed A Package A Process/ Temperature Range
Blank I(1) PF BF
Commercial (0C to +70C) Industrial (-40C to +85C)
100-pin TQFP (PN100-1) 100-pin fpBGA (BF100)
6 7 9 L
Commercial Only Commercial & Industrial Commercial Only Low Power
Speed in nanoseconds
70V9359 144K (8K x 18-Bit) Synchronous Dual-Port RAM 70V9349 72K (4K x 18-Bit) Synchronous Dual-Port RAM
NOTE: 1. Contact your local sales office for Industrial temp range for other speeds, packages and powers.
5638 drw 20
IDT Clock Solution for IDT70V9359/49 Dual-Port
Dual-Port I/O Specitications IDT Dual-Port Part Number Voltage I/O Input Capacitance Clock Specifications Input Duty Maximum Jitter Cycle Frequency Tolerance Requirement IDT PLL Clock Device IDT2305 IDT2308 IDT2309 IDT Non-PLL Clock Device FCT3805 FCT3805D/E FCT3807 FCT3807D/E
5638 tbl 12
70V9359/49
3.3
LVTTL
9pF
40%
100
150ps
Datasheet Document History
10/01/01: 7/3/02 : 08/15/03: Initial Public Release Page 2 & 3 Added data revision for pin configurations Consolidated multiple devices into one datasheet Removed Preliminary status Page 16 Added IDT Clock Solution Table
CORPORATE HEADQUARTERS 2975 Stender Way Santa Clara, CA 95054
for SALES: 800-345-7015 or 408-727-6116 fax: 408-492-8674 www.idt.com
6.42 16
for Tech Support: 831-754-4613 DualPortHelp@idt.com
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